Features: · High speed switching· Low on-resistance· Capable of 4 V gate drive· Low drive current· High density mountingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 8 ...
HAT2025R: Features: · High speed switching· Low on-resistance· Capable of 4 V gate drive· Low drive current· High density mountingSpecifications Item Symbol Ratings Unit Drain to source vol...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
8 |
A |
Drain peak current |
ID(pulse)1 |
64 |
A |
Body-drain diode reverse drain current |
IDR |
8 |
A |
Channel dissipation |
Pch2 |
2.5 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
-55to+150 |
°C |