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HAT1111C

Features: • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = 10 V)• Low drive current.• 4.5 V gate drive devices.• High density mountingSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 / ...

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SeekIC No. : 004358618 Detail

HAT1111C: Features: • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = 10 V)• Low drive current.• 4.5 V gate drive devices.• High density mountingSpecifications Parameter ...

HAT1111C Data Sheet

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Part Number:
HAT1111C
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = 10 V)
• Low drive current.
• 4.5 V gate drive devices.
• High density mounting


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS -60 V
Gate to source voltage VGSS 20 / +10 V
Drain current ID -2 A
Drain peak current ID(pulse) Note1 -8 A
Body-drain diode reverse drain current IDR -2 A
Cannel dissipation PCh Note 2 1.25 W
Cannel temperature Tch 150
Storage temperature Tstg -55 ~ 150
Notes:
1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 * 40 * 1.6mm), PW 5 s, Ta = 25°C


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