Features: • Low on-resistanceRDS(on) = 225 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±...
HAT1096C: Features: • Low on-resistanceRDS(on) = 225 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Item Symbol ...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
20 |
V |
Gate to source voltage |
VGSS |
±12 |
V |
Drain current |
ID |
1 |
A |
Drain peak current |
ID(pulse)Note 1 |
4 |
A |
Body-Drain diode reverse Drain current |
IDR |
1 |
A |
Channel dissipation |
Pch Note 2 |
790 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |