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HAT1095C

Features: • Low on-resistanceRDS(on) = 108 mΩ typ. (at VGS = 4.5 V)• Low drive current.• 1.8 V gate drive devices.• High density mountingSpecifications Item Symbol Ratings Unit Drain-Source Voltage VDSS -12 V Gate to source voltage VG...

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SeekIC No. : 004358612 Detail

HAT1095C: Features: • Low on-resistanceRDS(on) = 108 mΩ typ. (at VGS = 4.5 V)• Low drive current.• 1.8 V gate drive devices.• High density mountingSpecifications Item S...

HAT1095C Data Sheet

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Part Number:
HAT1095C
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-resistance
  RDS(on) = 108 mΩ typ. (at VGS = 4.5 V)
• Low drive current.
• 1.8 V gate drive devices.
• High density mounting


Specifications

Item
Symbol
Ratings
Unit
Drain-Source Voltage
VDSS
-12
V
Gate to source voltage
VGSS
±8
V
Drain current
ID
-2
A
Drain peak current
ID (pulse)Note1
-8
A
Body-drain diode reverse drain current
IDR
-2
A
Channel dissipation
Pch Note2
830
A
Channel to case thermal impedance
ch-c
2.08
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
            2. When using the glass epoxy board. (FR4 40 * 40 * 1.6mm), Ta = 25


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