Features: • Low on-resistance RDS(on) = 134 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS -20 V Gate to source voltage VGSS ±12 V D...
HAT1091C: Features: • Low on-resistance RDS(on) = 134 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Parameter Symbol...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | -20 | V |
Gate to source voltage | VGSS | ±12 | V |
Drain current | ID | -1.5 | A |
Peak Drain Current | ID(pulse)Note1 | -6 | A |
Bodydrain diode reverse drain current | IDR | -1.5 | A |
Channel dissipation |
PchNote2 |
830 |
mW |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |