Features: • Low on-resistance RDS(on) = 50 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 20 V Gate to Source voltage VGSS ±12 V Drain c...
HAT1090C: Features: • Low on-resistance RDS(on) = 50 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Item Symbol Rati...
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Item | Symbol | Ratings | Unit |
Drain to Source voltage | VDSS | 20 | V |
Gate to Source voltage | VGSS | ±12 | V |
Drain current | ID | 2.5 | A |
Drain peak current | ID (pulse)Note1 | 10 | A |
Body - Drain diode reverse drain current | IDR | 2.5 | A |
Channel dissipation | PchNote 2 | 900 | mW |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |