Features: • Low on-resistance RDS(on) = 79 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS -20 V Gate to source voltage VGSS...
HAT1089C: Features: • Low on-resistance RDS(on) = 79 m typ. (at VGS = 4.5 V)• Low drive current.• 2.5 V gate drive devices.• High density mountingSpecifications Parameter Sym...
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Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | -20 | V |
Gate to source voltage | VGSS | ±12 | V |
Drain current | ID | -2 | A |
Peak Drain Current | ID(pulse) Note1 |
-8 | A |
Bodydrain diode reverse drain current | IDR | -2 | A |
Channel dissipation |
PchNote2 |
850 |
mW |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |