HAT1072H

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 40A
Vgs(th) (Max) @ Id: -
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
Gate Charge (Qg) @ Vgs: 155nC @ 10V
Power - Max: 30W
Input Capacitance (Ciss) @ Vds: 9500pF @ 10V
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK


Features:

• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance R_{DS (on)} = 3.6 mΩ typ (at V_GS = 10 V)


Specifications

Item	Symbol	Value	Unit
Drain to source voltage	VDSS	30	V
Gate to source voltage	VGSS	20 / +10	V
Drain current	ID	40	A
Drain peak current	ID (pulse) Note 1	160	A
Body-drain diode reverse drain current	IDR	40	A
Channel dissipation	Pch Note 2	30	W
Channel temperature	Tch	150
Storage temperature	Tstg	55 to +150

Notes: 1. PW 10 µs, duty cycle 1%
           2. Tc = 25