Features: • Low on-resistance• Capable of 4 V gate drive• High density mountingSpecifications Symbol Parameter Value Unit VDSSVGSSIDID(pulse) IDRPchPchTchTstg Drain to source voltageGate to source voltageDrain currentDrain peak currentBody-drain diode reverse ...
HAT1065T: Features: • Low on-resistance• Capable of 4 V gate drive• High density mountingSpecifications Symbol Parameter Value Unit VDSSVGSSIDID(pulse) IDRPchPchTchTstg D...
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Symbol |
Parameter |
Value |
Unit |
VDSS VGSS ID ID(pulse) IDR Pch Pch Tch Tstg |
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature |
200 ±15 0.25 1 0.25 1 1.5 150 55 to +150 |
V V A A A W W °C °C |