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HAT1054R

Features: • Low on-resistance• Capable of 2.5 V gate drive• Low drive current• High density mountingSpecifications Item Symbol Ratings UNIT Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGSS ±12 V Drain current ID -6 A Drain peak c...

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SeekIC No. : 004358603 Detail

HAT1054R: Features: • Low on-resistance• Capable of 2.5 V gate drive• Low drive current• High density mountingSpecifications Item Symbol Ratings UNIT Drain to Source Voltage...

HAT1054R Data Sheet

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Part Number:
HAT1054R
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Description



Features:

• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting


Specifications

Item Symbol Ratings UNIT
Drain to Source Voltage VDSS -20 V
Gate to Source Voltage VGSS ±12 V
Drain current ID -6 A
Drain peak current IDpulse) Note 1 -48 A
Body-drain diode reverse drain current IDR -6 A
Channel dissipation PCH 2 W
Channel dissipation PCH 3 W
Channel Temperature Tch 150
Storage Temperature Tstg 55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 * 40 * 1.6 mm), PW 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 * 40 * 1.6 mm), PW 10 s


Description

HAT1054R: Silicon P Channel Power MOS FET High Speed Power Switching


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