Features: • Low on-resistance• Capable of 2.5 V gate drive• Low drive current• High density mountingSpecifications Item Symbol Ratings UNIT Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGSS ±12 V Drain current ID -6 A Drain peak c...
HAT1054R: Features: • Low on-resistance• Capable of 2.5 V gate drive• Low drive current• High density mountingSpecifications Item Symbol Ratings UNIT Drain to Source Voltage...
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Item | Symbol | Ratings | UNIT |
Drain to Source Voltage | VDSS | -20 | V |
Gate to Source Voltage | VGSS | ±12 | V |
Drain current | ID | -6 | A |
Drain peak current | IDpulse) Note 1 | -48 | A |
Body-drain diode reverse drain current | IDR | -6 | A |
Channel dissipation | PCH | 2 | W |
Channel dissipation | PCH | 3 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | 55 to +150 |