Features: · Low on-resistance· Low drive current· High density mounting· 2.5 V gate drive device can be driven from 3 V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS -20 V Gate to source voltage VGSS ±12 V Drain current ID ...
HAT1043M: Features: · Low on-resistance· Low drive current· High density mounting· 2.5 V gate drive device can be driven from 3 V sourceSpecifications Item Symbol Ratings Unit Drain to sour...
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Item |
Symbol |
Ratings |
Unit | |
Drain to source voltage |
VDSS |
-20 |
V | |
Gate to source voltage |
VGSS |
±12 |
V | |
Drain current |
ID |
-4.4 |
A | |
Drain peak current |
ID(pulse)1 |
-17.6 |
A | |
Body-drain diode reverse drain current |
IDR2 |
-4.4 |
A | |
Channel dissipation |
Pch(pulse)2 |
2.0 |
W | |
Pch(continuous)3 |
1.05 |
W | ||
Channel temperature |
Tch |
150 |
°C | |
Storage temperature |
Tstg |
-55to+150 |
°C |