Features: high-precision linear Hall effect sensor with ratiometric output and digital signal processing multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function open-circuit detection (ground and supply line break detection) for programmi...
HAL805: Features: high-precision linear Hall effect sensor with ratiometric output and digital signal processing multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redund...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
high-precision linear Hall effect sensor with ratiometric output and digital signal processing
multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function
open-circuit detection (ground and supply line break detection)
for programming an individual sensor within several sensors in parallel to the same supply voltage, a selection can be done via the output pin
to enable programming of an individual sensor amongst several sensors running parallel to the same supply voltage, each sensor can be selected via its output pin
temperature characteristics are programmable for matching all common magnetic materials
programmable clamping function
programming through a modulation of the supply voltage
operates from −40 °C up to 150 °C ambient temperature
operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V
total error < 2.0% over operating voltage range and temperature range
operates with static magnetic fields and dynamic magnetic fields up to 2 kHz
overvoltage and reverse-voltage protection at all pins
magnetic characteristics extremely robust against mechanical stress
short-circuit protected push-pull output
EMC and ESD optimized design
Symbol |
Parameter |
Pin No. |
Min. |
Max. |
Unit |
VDD |
Supply Voltage |
1 |
-8.5 |
8.5 |
V |
VDD |
Supply Voltage |
1 |
-14.41)2) |
−14.41)2) |
V |
-IDD |
Reverse Supply Current |
1 |
- |
501) |
mA |
IZ |
Current through Protection Device |
1 or 3 |
-3004) |
3004) |
mA |
VOUT |
Output Voltage |
3 |
-56) -56) |
8.53) 14.43)2) |
V |
VOUT-VDD |
Excess of Output Voltage over Supply Voltage |
3,1 |
2 |
mA | |
IOUT |
Continuous Output Current |
3 |
-10 |
10 |
mA |
tSh |
Output Short Circuit Duration |
3 |
- |
10 |
mA |
TS |
Storage Temperature Range |
-65 |
150 |
°C | |
TJ |
Junction Temperature Range |
-40 -40 |
1705) 150 |
°C |
The HAL805 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior).
The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The HAL805 Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers,converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 7.
The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset.As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The HAL805 IC is addressed by modulating the supply voltage (see Fig. 21). In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The analog output is switched off during the communication.
Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin.The open-circuit detection provides a defined output voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The HAL805 circuitry also rejects offset shifts due to mechanical stress from the package.
The non-volatile memory consists of redundant EEPROMcells. In addition, the HAL805 sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins