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HAF70009

Features: • 56A, 100V• Simulation Models- Temperature Compensated PSPICE® and SABER© Electrical Models- Spice and Saber Thermal Impedance Models- www.intersil.com• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related Literature- TB334, Guidelines for...

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SeekIC No. : 004358494 Detail

HAF70009: Features: • 56A, 100V• Simulation Models- Temperature Compensated PSPICE® and SABER© Electrical Models- Spice and Saber Thermal Impedance Models- www.intersil.com• Peak Cu...

HAF70009 Data Sheet

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Part Number:
HAF70009
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• 56A, 100V
• Simulation Models
- Temperature Compensated PSPICE® and SABER© Electrical Models
- Spice and Saber Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

 




Specifications

Item
Symbol
HAF70009
Units
Drain to Source Voltage (Note 1)
VDSS
100
V
Drain to Gate Voltage (RGS = 20k)(Note 1)
VGR
100
V
Gate to Source Voltage
VGS
±20
V
Drain Current Continuous (Figure 2)
ID
56
A
Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
EAS
Figures 6,14,15
Power Dissipation
PD
200
W
Derate Above 25
-
1.35
W/
Operating and Storage Temperature
TJ,TSTG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
TL
300
Package Body for 10s, See Tech Brief 334
TSTG
260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25 to 150.


Description

This HAF70009 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HAF70009 was designed for use in applications where power efficiency is important, such as switching regulators,switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75639.




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