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HAF1009(L)

Features: • Logic level operation (-4 to -6 V Gate drive)• High endurance capability against to the short circuit• Builtin the over temperature shutdown circuit• Latch type shutdown operation (Need 0 voltage recovery)Specifications Item Symbol Ratings Unit ...

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SeekIC No. : 004358470 Detail

HAF1009(L): Features: • Logic level operation (-4 to -6 V Gate drive)• High endurance capability against to the short circuit• Builtin the over temperature shutdown circuit• Latch type s...

HAF1009(L) Data Sheet

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Part Number:
HAF1009(L)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• Logic level operation (-4 to -6 V Gate drive)
• High endurance capability against to the short circuit
• Builtin the over temperature shutdown circuit
• Latch type shutdown operation (Need 0 voltage recovery)


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
16
V
Gate to source voltage
VGSS
2.5
V
Drain current
ID
40
A
Drain peak current
ID (pulse) Note1
80
A
Body-drain diode reverse drain
current
IDR
40
A
Channel dissipation
PchNote2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Notes: 1. PW 10s, duty cycle 1 %
            2. Value at Tc = 25°C


Description

This HAF1009(L) FET has the over temperature shutdown capability sensing to the junction temperature. This HAF1009(L) FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.




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