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HA3669

Specifications• Maximum TemperaturesTstg Storage Temperature ..................................... -55 ~ +150 °CTj Junction Temperature ................................................... +150 °C• Maximum Power DissipationTotal Power Dissipation (Ta=25°C) .................................

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SeekIC No. : 004358320 Detail

HA3669: Specifications• Maximum TemperaturesTstg Storage Temperature ..................................... -55 ~ +150 °CTj Junction Temperature ................................................... +150...

HA3669 Data Sheet

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Part Number:
HA3669
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Specifications

• Maximum Temperatures
Tstg Storage Temperature ..................................... -55 ~ +150 °C
Tj Junction Temperature ................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................. 750 mW
• Maximum Voltages and Currents
BVCBO Collector to Base Breakdown Voltage.......................... 80 V
BVCEO Collector to Emitter Breakdown Voltage....................... 80 V
BVEBO Emitter to Base Emitter Breakdown Voltage................... 5 V
IC Collector Current (DC) ........................................................... 2 A


Description

The HA3669 is designed for using in power amplifier applications,power switching application.


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