Features: · Soft Switching Driver Small Surface Mount Package: FP-80E (QFP80 Pin) Low thermal resistance: 35°C/W with 6 layer multi glass-epoxy board· Low output saturation voltage___Spindle 0.8 V Typ (@1.0 A)___VCM 0.8 V Typ (@0.8 A)PinoutSpecifications Item Symbol Rating Unit ...
HA13561F: Features: · Soft Switching Driver Small Surface Mount Package: FP-80E (QFP80 Pin) Low thermal resistance: 35°C/W with 6 layer multi glass-epoxy board· Low output saturation voltage___Spindle 0.8 V T...
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· Soft Switching Driver Small Surface Mount Package: FP-80E (QFP80 Pin) Low thermal resistance: 35°C/W with 6 layer multi glass-epoxy board
· Low output saturation voltage
___Spindle 0.8 V Typ (@1.0 A)
___ VCM 0.8 V Typ (@0.8 A)
Item |
Symbol |
Rating |
Unit |
Notes |
Power supply voltage |
Vps |
+15 |
V |
1 |
Signal supply voltage |
VSS |
+7 |
V |
2 |
Input voltage |
VIN |
VSS |
V |
3 |
Output current-Spindle |
Iospn (Peak) |
1.8 |
A |
|
Iospn (DC) |
1.2 |
A | ||
Output current-VCM |
Iovcm (Peak) |
1.2 |
A |
|
Iovcm (DC) |
0.8 |
A | ||
Power dissipation |
PT |
5 |
W |
|
Junction temperature |
Tj |
+150 |
°C |
|
Storage temperature |
Tstg |
55 to +125 |
°C |
Notes: 1. Operating voltage range is 10.2 V to 13.8 V.
2. Operating voltage range is 4.25 V to 5.75 V
3. Applied to Pin 40, 41, 42, 44, 56, 57 and pin 62
4. Operating junction temperature range is Tjop = 0°C to +125°C
5. ASO of upper and lower power transistor are shown below. Operating locus must be within the ASO.
6. The OTSD (Over Temperature Shut Down) function is built in this IC to avoid same damages by over heat of this chip. However, please note that if the junction temperature of this IC becomes higher than the operating maximum junction temperature (Tjopmax = 125°C), the reliability of this IC often goes down.
7. Thermal resistance: qj-a35°C/W with 6 layer multi glass-epoxy board.
This HA13561F COMBO Driver for HDD application consists of Sensorless Spindle Driver and BTL type VCM Driver. Bipolar Process is applied and a "Soft Switching Circuit" for less commutation noise and a "Booster Circuit' for smaller Saturation Voltage of Output Transistor are also implemented