Features: • Low on-resistance RDS(on) = 85 m typ.• Low drive current• 4.5 V gate drive device can driven from 5 V sourceSpecifications Item Symbol Value Unit Drain to source voltage VDSS -100 V Drain to source voltage VGSS ±20 V Drain cur...
H7P1002DS: Features: • Low on-resistance RDS(on) = 85 m typ.• Low drive current• 4.5 V gate drive device can driven from 5 V sourceSpecifications Item Symbol Value Unit Drai...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage |
VDSS |
-100 |
V |
Drain to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
-15 |
A |
Drain peak current |
ID(pulse) Note1 |
-60 |
A |
Body-drain diode reverse drain current |
IDR |
-15 |
A |
Avalanche current |
IAP Note2 |
-12 |
A |
Avalanche energy |
EAR Note 2 |
14.4 |
mJ |
Channel dissipation |
Pch Note 3 |
30 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |