Features: ` Low on-resistance RDS (on)= 85 m typ. ` Low drive current ` Capable of 4.5 V gate drive Specifications Item Symbol Value Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 15 A Drain p...
H7N1005LM: Features: ` Low on-resistance RDS (on)= 85 m typ. ` Low drive current ` Capable of 4.5 V gate drive Specifications Item Symbol Value Unit Drain to source voltage VDSS 1...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage |
VDSS |
100 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
15 |
A |
Drain peak current |
ID(pulse)Note 1 |
30 |
A |
Body to drain diode reverse drain current |
IDR |
30 |
A |
Avalanche current |
IAPNote 3 |
8 |
A |
Avalanche energy |
EARNote 3 |
6.4 |
mJ |
Channel dissipation |
PchNote 2 |
30 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
-55 to +150 |