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H7N1004FM

Features: • Low on-resistance• RDS(on) = 25 mΩ typ.• Low drive current• Available for 4.5 V gate driveSpecifications Item Symbol Value Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ...

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SeekIC No. : 004357900 Detail

H7N1004FM: Features: • Low on-resistance• RDS(on) = 25 mΩ typ.• Low drive current• Available for 4.5 V gate driveSpecifications Item Symbol Value Unit Drain to ...

H7N1004FM Data Sheet

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Part Number:
H7N1004FM
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• Low on-resistance
• RDS(on) = 25 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
25
A
Drain peak current
ID (pulse)Note1
100
A
Body-drain diode reverse drain current
IDR
100
A
Avalanche current
IAP Note 3
15
A
Avalanche energy
EAR Note 3
22.5
mJ
Channel dissipation
Pch Note 2
25
W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
           2. Value at Tc = 25
           3. Value at Tch = 25, Rg 50 Ω


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