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H7N0608FM

Features: • Low on-resistance RDS(on) = 6.5 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 50 A ...

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H7N0608FM: Features: • Low on-resistance RDS(on) = 6.5 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain t...

H7N0608FM Data Sheet

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Part Number:
H7N0608FM
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Low on-resistance RDS(on) = 6.5 m typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source


Specifications

Item Symbol Value Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 50 A
Drain peak current ID (pulse) Note 1 200 A
Body-drain diode reverse drain current IDR 50 A
Avalanche current IAP Note3 40  
Avalanche energy EAR Note3 137  
Channel dissipation Pch Note 2 30 W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50


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