Features: • Low on-resistanceRDS(on) = 26 m typ.• Low drive current.• Capable of 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 20 A ...
H7N0607DS: Features: • Low on-resistanceRDS(on) = 26 m typ.• Low drive current.• Capable of 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source voltage ...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
60 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
20 |
A |
Drain peak current |
ID(pulse)Note 1 |
80 |
A |
Body-Drain diode reverse Drain current |
IDR |
20 |
A |
Avalanche current |
IAPNote3 |
8 |
A |
Avalanche energy |
EARNote3 |
5.48 |
mj |
Channel dissipation |
Pch Note 2 |
25 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |