Features: • Low on - resistanceRDS (on) = 11 m typ.• Low drive current• Capable of 4.5 gate driveSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 60 V Gate to Source voltage VGSS ±20 V Drain current ID 30 A ...
H7N0603DS: Features: • Low on - resistanceRDS (on) = 11 m typ.• Low drive current• Capable of 4.5 gate driveSpecifications Item Symbol Ratings Unit Drain to Source voltage ...
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Item |
Symbol |
Ratings |
Unit |
Drain to Source voltage |
VDSS |
60 |
V |
Gate to Source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
30 |
A |
Drain peak current |
ID (pulse) Note1 |
120 |
A |
Body drain diode reverse drain current |
IDR |
30 |
A |
Avalanche current |
IAP Note 3 |
25 |
A |
Avalanche energy |
EARNote3 |
53.6 |
mJ |
Channel dissipation |
Pch Note3 |
40 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
55 to +150 |
°C |