Features: `Low on-resistance RDS (on) = 4.1 m typ. ` 4.5 V gate drive devices ` High Speed Switching Specifications Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 85 A Drain peak current ID(pulse)Not...
H7N0602LM: Features: `Low on-resistance RDS (on) = 4.1 m typ. ` 4.5 V gate drive devices ` High Speed Switching Specifications Item Symbol Value Unit Drain to source voltage VDSS 60 V Gat...
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Item | Symbol | Value | Unit |
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 85 | A |
Drain peak current | ID(pulse)Note 1 | 340 | A |
Body to drain diode reverse drain current | IDR | 85 | A |
Avalanche current | IAPNote 3 | 65 | A |
Avalanche energy | EARNote 3 | 362 | mJ |
Channel dissipation | PchNote 2 | 100 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |