Features: • Low on-resistance RDS(on) = 4.1 m typ.• Low drive current• Available for 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID ...
H7N0602AB: Features: • Low on-resistance RDS(on) = 4.1 m typ.• Low drive current• Available for 4.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source vo...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
60 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
85 |
A |
Drain peak current |
ID (pulse)Note1 |
340 |
A |
Body-drain diode reverse drain current |
IDR |
85 |
A |
Avalanche current |
IAP Note3 |
65 |
A |
Avalanche energy |
EAR Note3 |
362 |
mJ |
Channel dissipation |
PchNote2 |
100 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |