Features: • Low on-resistance RDS(on) = 4.0 m typ.• Low drive current.• Capable of 4.5 V gate driveSpecifications Item Symbol Value Unit Drain to source voltageGate to source voltageDrain currentDrain peak currentBody drain diode reverse drain currentAvalanche ...
H7N0405LM: Features: • Low on-resistance RDS(on) = 4.0 m typ.• Low drive current.• Capable of 4.5 V gate driveSpecifications Item Symbol Value Unit Drain to source voltageG...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature |
VDSS VGSS ID ID (pulse) IDR IAP EAR Pch Tch Tstg |
40 ±20 80 320 80 40 213 80 150 55 to +150 |
V V A A A A mJ W °C °C |