Features: • Low on-resistance RDS (on) = 3.1 m typ.• 4.5 V gate drive devices• High Speed SwitchingSpecifications Item Symbol Value Unit Drain to source voltage VDSS 40 V Gate to source voltage VGSS ±20 V Drain current ID 95 ...
H7N0401LM: Features: • Low on-resistance RDS (on) = 3.1 m typ.• 4.5 V gate drive devices• High Speed SwitchingSpecifications Item Symbol Value Unit Drain to source voltag...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage |
VDSS |
40 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
95 |
A |
Drain peak current |
ID (pulse) Note 1 |
380 |
A |
Body to drain diode reverse drain current |
IDR |
95 |
A |
Avalanche current |
IAPNote 3 |
65 |
A |
Avalanche energy |
EARNote 3 |
560 |
mJ |
Channel dissipation |
Pch Note 2 |
100 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |