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H7N0312LM

Features: • Low on-resistance RDS (on) = 2.6 mΩ typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item SYMBOL MAX UNIT Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V ...

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SeekIC No. : 004357872 Detail

H7N0312LM: Features: • Low on-resistance RDS (on) = 2.6 mΩ typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item SYMBOL MAX U...

H7N0312LM Data Sheet

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Part Number:
H7N0312LM
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
  RDS (on) = 2.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source


Specifications

Item
SYMBOL
MAX
UNIT
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
85
A
Drain peak current
I (pulse) Note1
340
A
Body-drain diode reverse drain current
IDR
85
A
Channel dissipation
PchNote2
125
W
Channel to case Thermal impedance
ch-c
1.0
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 s, duty cycle 1%
           2. Value at Tc = 25



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