Features: • Low on-resistance• RDS(on) = 2.6 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current I...
H7N0312LD: Features: • Low on-resistance• RDS(on) = 2.6 m typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit...
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Item |
Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 30 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 85 | A |
Drain peak current | ID(pulse)Note 1 | 340 | A |
Body-drain diode reverse drain current | IDR | 85 | A |
Channel dissipation | Pch Note 2 | 125 | W |
Channel to Case Thermal Impedance | ch-c | 1.0 | /W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |