Features: Low on-resistance RDS(on)= 8 mΩtyp. Low drive current Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 30 A Drain peak current ID(pulse) Note 1 120 A Body-drai...
H7N0310LS: Features: Low on-resistance RDS(on)= 8 mΩtyp. Low drive current Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ...
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Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 30 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 30 | A |
Drain peak current | ID(pulse) Note 1 | 120 | A |
Body-drain diode reverse drain current | IDR | 30 | A |
Channel dissipation | Pch Note 3 | 50 | W |
Channel to Case Thermal Impedance | ch-c | 2.5 | °C/W |
Channel temperature | Tch | 150 | °C |
Storage temperature | Tstg | 55 to +150 | °C |