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H7N0308LM

Features: • Low on-resistance RDS (on) = 3.8 mΩ typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V ...

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SeekIC No. : 004357862 Detail

H7N0308LM: Features: • Low on-resistance RDS (on) = 3.8 mΩ typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value ...

H7N0308LM Data Sheet

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Part Number:
H7N0308LM
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low on-resistance
   RDS (on) = 3.8 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
70
A
Drain peak current
I (pulse) Note1
280
A
Body-drain diode reverse drain current
IDR
70
A
Channel dissipation
PchNote2
100
W
Channel to case thermal impedance
ch-c
1.25
/W
Channel to ambient thermal impedance
ch-a
89
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
           2. Value at Tc = 25


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