Features: • Low on-resistance RDS (on) = 3.8 mΩ typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V ...
H7N0308LD: Features: • Low on-resistance RDS (on) = 3.8 mΩ typ.• Low drive current• 4.5 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Value ...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage |
VDSS |
30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
70 |
A |
Drain peak current |
I (pulse) Note1 |
280 |
A |
Body-drain diode reverse drain current |
IDR |
70 |
A |
Channel dissipation |
PchNote2 |
100 |
W |
Channel to case thermal impedance |
ch-c |
1.25 |
/W |
Channel to ambient thermal impedance |
ch-a |
89 |
/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |