Features: • Low on-resistance• Low leakage current• High speed switching• Low gate charge• Avalanche ratingsSpecifications Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 3.5 A D...
H5N5006LM: Features: • Low on-resistance• Low leakage current• High speed switching• Low gate charge• Avalanche ratingsSpecifications Item Symbol Value Unit Drain to so...
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Item | Symbol | Value | Unit |
Drain to source voltage | VDSS | 500 | V |
Gate to source voltage | VGSS | ±30 | V |
Drain current | ID | 3.5 | A |
Drain peak current | ID (pulse) Note 1 | 14 | A |
Body-drain diode reverse drain current | IDR | 3.5 | A |
Channel to case thermal impedance | ch-c | 2.5 | °C/W |
Avalanche current | IAP Note 3 | 3.5 | |
Channel dissipation | Pch Note 2 | 50 | W |
Channel temperature | Tch | 150 | °C |
Storage temperature | Tstg | 55 to +150 | °C |