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H50N03J

Features: • RDS(on) =6m@VGS=10V, ID=30A• RDS(on) =9m@VGS=4.5V, ID=30A• Advanced trench process technology• High Density Cell Design for Ultra Low On-Resistance• Specially Designed for DC/DC Converters and Motor Drivers• Fully Characterized Avalanche Voltage and ...

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H50N03J: Features: • RDS(on) =6m@VGS=10V, ID=30A• RDS(on) =9m@VGS=4.5V, ID=30A• Advanced trench process technology• High Density Cell Design for Ultra Low On-Resistance• Special...

H50N03J Data Sheet

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Part Number:
H50N03J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• RDS(on) =6m@VGS=10V, ID=30A
• RDS(on) =9m@VGS=4.5V, ID=30A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM


Specifications

Parameter
Symbol
Value
Units
Drain-Source Voltage
VDS
25
A
Gate-Source Voltage
VGS
±20
A
Continuous Drain Current
ID
50
V
Pulsed Drain Current *1
IDM
350
V
Maximum Power Dissipation
TA=25oC
PD
70
W
TA=75oC
42
W
Operating Junction and Storage Temperature Range
TJ,Tstg
-55 to 150
oC
Avalanche Energy with Single Pulse
ID=50A, VDD=25V, L=0.1mH
EAS
300
mJ
Junction-to-Case Thermal Resistance
RJC
1.8
OC/W
Junction-to-Ambient Thermal Resistance(PCB mounted)*2
RJA
40
OC/W
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board


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