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H35N03J

Features: • RDS(on)=8.5m@VGS=10V, ID=30A• RDS(on)=13m@VGS=4.5V, ID=30A• Advanced trench process technology• High Density Cell Design for Ultra Low On-Resistance• Specially Designed for DC/DC Converters and Motor Drivers• Fully Characterized Avalanche Voltage and...

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SeekIC No. : 004357578 Detail

H35N03J: Features: • RDS(on)=8.5m@VGS=10V, ID=30A• RDS(on)=13m@VGS=4.5V, ID=30A• Advanced trench process technology• High Density Cell Design for Ultra Low On-Resistance• Specia...

H35N03J Data Sheet

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Part Number:
H35N03J
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/18

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Product Details

Description



Features:

• RDS(on)=8.5m@VGS=10V, ID=30A
• RDS(on)=13m@VGS=4.5V, ID=30A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM


Specifications

Parameter
  
Symbol
Value
Units
Drain-Source Voltage  
VDS
25
V
Gate-Source Voltage  
VGS
±20
V
Continuous Drain Current  
ID
35
A
Pulsed Drain Current *1  
IDM
140
A
Maximum Power Dissipation TA=25
PD
57
W
TA=75
23
W
Operating Junction and Storage Temperature Range  
TJ,Tstg
-55 to 150
Avalanche Energy with Single Pulse
ID=35A, VDD=20V, L=0.14mH		  
EAS
300
mJ
Junction-to-Case Thermal Resistance  
RJC
2.2
/W
Junction-to-Ambient Thermal Resistance(PCB mounted)*2  
RJA
50
/W
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board


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