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H2N6718L

Features: • High Power: 850mW• High Current: 1ASpecifications• Maximum TemperaturesStorage Temperature ....................................................................................... -55 ~ +150 °CJunction Temperature ..........................................................

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SeekIC No. : 004357550 Detail

H2N6718L: Features: • High Power: 850mW• High Current: 1ASpecifications• Maximum TemperaturesStorage Temperature ................................................................................

H2N6718L Data Sheet

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Part Number:
H2N6718L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• High Power: 850mW
• High Current: 1A


Specifications

• Maximum Temperatures
Storage Temperature ....................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ........................................................................... 850 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 100 V
VCEO Collector to Emitter Voltage ................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current (Continue) ........................................................................................... 1 A
IC Collector Current (Pulse).................................................................................................. 2 A


Description

The H2N6718L is designed for general purpose medium power amplifier and switching applications.


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