H2N6520

The H2N6520 is a type of pnp epitaxial planar transistor, which is designed for general purpose applications requirin g high breakdown voltages.

Features of the H2N6520 are:(1)high collector-emitter breakdown voltage;(2)low collector-emitter saturation voltag e;(3)the H2N6520 is complementary to H2N6517.

The absolute maximum ratings and characteristics(Ta=25°C) of the H2N6520 can be summarized as:(1)maximum te mperatures:storage temperature is -55°C+150 °C,junction temperature is +150 °C maximum;(2)maximum power dissipation:total power dissipation (Ta=25°C)is 625 mW;(3)maximum voltages and currents (Ta=25°C):VCBO collec tor to base voltage is -350 V,VCEO collector to emitter voltage is -350 V,VEBO emitter to base voltage is -5 V,IC colle ctor current is -500 mA,IB base current is -250 mA.characteristics:(1):BVCBO is 350 V min when IC is-100uA and IE is 0;(2)BVCEO is-350V min when IC is -1mA and IB is 0;(3)BVEBO is-5V min when IE is-10uA and IC is 0;(4):ICBO is -50 nA max when VCB is-250V and IE is 0;(5):IEBO is -50 nA max when VEB is-4V and IC is 0;(6):cob is 6 pF when VCB is-20V and f is 1MHz and IE is 0.