H2N5551-N

The H2N5551-N is a type of pnp epitaxial planar transistor, which is designed for amplifier transistor.

Features of the H2N5551-N are:(1)high collector-emitter breakdown voltage(VCEO>160V (@IC=1mA));(2)compleme nts to PNP type H2N5401.

The absolute maximum ratings and characteristics(Ta=25°C) of the H2N5551-N can be summarized as:(1)maximum temperatures:storage temperature is -55°C+150 °C,junction temperature is +150 °C maximum;(2)maximum powe r dissipation:total power dissipation (Ta=25°C)is 625 mW;(3)maximum voltages and currents (Ta=25°C):VCBO coll ector to base voltage is 180 V,VCEO collector to emitter voltage is 160 V,VEBO emitter to base voltage is 6V,IC coll ector current is 600 mA.characteristics:(1):BVCBO is 180 V min when IC is 100uA and IE is 0;(2)BVCEO is 160V min when IC is 1mA and IB is 0;(3)BVEBO is 6V min when IE is 10uA and IC is 0;(4):ICBO is 50 nA max when VCB is 120V and IE is 0;(5):IEBO is 50 nA max when VEB is 4V and IC is 0;(6):cob is 6 pF max when VCB is 10V and f is 1MHz and IE is 0;(7):VCE(sat)1 is 0.15V when IC is 10mA and IB is 1.0mA.etc.