H25R1202

The H25R1202 is designed as one kind of reverse conducting IGBT with monolithic body diode which has some features such as:(1)body diode clamps negative voltages;(2)powerful monolithic body diode with very low forward voltage;(3)Trench and Fieldstop technology for 1200 V applications offers very tight parameter distribution and high ruggedness, temperature stable behavior;(4)NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat);(5)low EMI;(6)qualified according to JEDEC for target applications;(7)Pb-free lead plating;RoHS compliant.And it can be used in inductive cooking and soft switching applications.

The absolute maximum ratings of the H25R1202 can be summarized as:(1)soldering temperature,1.6mm (0.063 in.) from case for 10s:260°C;(2)storage temperature:-55 to +175°C;(3)operating junction temperature:-45 to +175°C;(4)power dissipation TC=25°C :365 W;(5)gate-emitter voltage:±20 V;(6)transient gate-emitter voltage(tp<10 µs, D<0.01):±25 V;(7)diode pulsed current,tp limited by Tjmax:75 A;(8)turn off safe operating area (VCE1200V, Tj175°C):75 A;(9)pulsed collector current, tp limited by Tjmax:75 A;(10)collector-emitter voltage:1200 V.If you want to know more information such as the electrical characteristics about the H25R1202,please download the datasheet in www.seekic.com or www.chinaicmart.com .