H11V1

The H11V1 is designed as one kind of GaAs infrared emitting diode and NPN silicon photo-transistor that can provides logic optical interfacing of TTL gates with guaranteed level compatibility in practical specified circuits. This device is a transistor output photo-coupled isolator specifically designed to eliminate ground loop cross talk and reflection problems when two distinct logic systems are coupled.

Features of the H11V1 are:(1)high gain, typical transimpedence, 1000 ;(2)low input current requirement, typical 3.5 mA at 1.6 V;(3)0 to 10 MHz operating bandwidth;(4)100 mA peak output drive capability.

The absolute maximum ratings of the H11V1 can be summarized as:(1)power dissipation: 150 milliwatts;(2)storage temperature: -40 to +100 ;(3)operating temperature: -25 to +80 ;(4)lead solder temperature: 260 ;(5)surge isolation voltage: 4000 VRMS;(6)stead state isolation voltage: 3750 VRMS. If you want to know more information such as the electrical characteristics about the H11V1, please download the datasheet in www.seekic.com or www.chinaicmart.com .