H11F2M

Transistor Output Optocouplers ANALOG FET

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H11F2M Picture
SeekIC No. : 00100541 Detail

H11F2M: Transistor Output Optocouplers ANALOG FET

floor Price/Ceiling Price

Part Number:
H11F2M
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Input Type : DC Isolation Voltage : 5300 Vrms
Maximum Forward Diode Voltage : 1.75 V Maximum Power Dissipation : 300 mW
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 40 C
Package / Case : PDIP-6 Packaging : Bulk    

Description

Maximum Collector Emitter Voltage :
Maximum Collector Emitter Saturation Voltage :
Current Transfer Ratio :
Maximum Collector Current :
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Maximum Power Dissipation : 300 mW
Input Type : DC
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Forward Diode Voltage : 1.75 V


Features:

`100 to 300M
`99.9% linearity
`15pF shunt capacitance
`100G I/O isolation resistance
`Extremely low offset voltage
`60 Vpk-pk signal capability
`No charge injection or latch-up
`ton, toff15s
`UL recognized (File #E90700)





Application

·Isolated variable attenuator
·Automatic gain control
·Active filter fine tuning/band switching
·Isolated sample and hold circuit
·Multiplexed, optically isolated A/D conversion





Pinout

  Connection Diagram




Specifications

Symbol
Parameter
Device
Value
Units
TSTG
TOPR
TSOL
Storage Temperature
Operating Temperature
Lead Solder Temperature
All
All
All
-55 to +150
-40 to +100
260 for 10 sec


IF
VR
IF(pk)
Continuous Forward Current
Reverse Voltage
Forward Current-Peak(10s pulse,1%duty cycle)
All
All
All
60
5
l
mA
V
A
PD
LED Power Dissipation 25 Ambient
Derate Linearly from 25
All
100
mW
1.33
mW/
PD
Detector Power Dissipation @ 25
All
300
mW
Derate linearly from 25
4.0
mW/
BV4-6
Breakdown Voltage (either polarity)
H11F1M
H11F2M
±30
V
H11F3M
±15
V
I4-6
Continuous Detector Current (either polarity)
All
±100
A





Description

The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The H11FXM series  detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.






Parameters:

Technical/Catalog InformationH11F2M
VendorFairchild Optoelectronics Group
CategoryIsolators
Voltage - Isolation5300Vrms
Input TypeDC
Output TypeTransistor
Current - Output / Channel100mA
Voltage - Output30V
Vce Saturation (Max)-
Current Transfer Ratio (Min)-
Mounting TypeThrough Hole
Package / Case6-DIP
PackagingTube
Number of Circuits1 - Single
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names H11F2M
H11F2M



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