H11D4

Current Transfer Ratio :
Maximum Collector Emitter Saturation Voltage : 0.4 V
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Packaging : Bulk
Maximum Power Dissipation : 300 mW
Input Type : DC
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Collector Current : 100 mA
Maximum Collector Emitter Voltage : 200 V


Features:

*High Voltage
- H11D1, H11D2, BV_CER= 300 V
- H11D3, H11D4, BV_CER= 200 V
*High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
*Underwriters Laboratory (UL) recognized File# E90700

Application

*Power supply regulators
*Digital logic inputs
*Microprocessor inputs
*Appliance sensor systems
*Industrial controls




Pinout






Specifications

Parameter	Symbol	Value	Units
TOTAL DEVICE Storage Temperature	TSTG	-55 to +150	°C
Operating Temperature	TOPR	-55 to +100	°C
Lead Solder Temperature	TSOL	260 for 10 sec	°C
Total Device Power Dissipation @ TA = 25°C	PD	260	mW
Derate above 25°C		3.5	mW/°C
EMITTER *Forward DC Current	IF	80	mA
*Reverse Input Voltage	VR	6.0	V
*Forward Current - Peak (1s pulse, 300pps)	IF (pk)	3.0	A
*LED Power Dissipation @ TA = 25°C	PD	150	mW
Derate above 25°C		1.41	mW/°C

Description

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.