H11B1

Current Transfer Ratio :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Packaging : Tube
Maximum Operating Temperature : + 100 C
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Isolation Voltage : 5300 Vrms
Maximum Collector Emitter Saturation Voltage : 1 V
Package / Case : PDIP-6
Maximum Collector Current : 100 mA
Maximum Power Dissipation : 260 mW


Features:

• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option-add option .300. (e.g., H11B1.300)




Application

• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.





Description

The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Optocoupler, Photodarlington Output, High Gain, with Base Connection