Features: • H11AV1 and H11AV2 feature 0.3 input-output lead spacing• H11AV1A and H11AV2A feature 0.4 input-output lead spacing• UL recognized (File #E90700, Vol. 2)• VDE recognized (File #102497)- Add option V (e.g., H11AV1AV-M)Application• Power supply regulators...
H11AV1-M: Features: • H11AV1 and H11AV2 feature 0.3 input-output lead spacing• H11AV1A and H11AV2A feature 0.4 input-output lead spacing• UL recognized (File #E90700, Vol. 2)• VDE re...
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Parameter |
Symbol |
Value |
Unit |
TOTAL DEVICE Storage Temperature |
TSTG |
-40 to +150 |
|
Operating Temperature |
TOPR |
-40 to +100 |
|
Wave solder temperature (see page 9 for reflow solder profiles |
TSOL |
260 for 10 sec |
|
Total Device Power Dissipation @ TA = 25 Derate above 25 |
PD |
250 |
mW |
2.94 |
mW/ | ||
EMITTER DC/Average Forward Input Current |
IF |
60 |
mA |
Reverse Input Voltage |
VR |
6 |
V |
LED Power Dissipation @ TA = 25 Derate above 25 |
PD |
120 |
mW |
1.41 |
mW/ | ||
DETECTOR Collector-Emitter Voltage |
VCEO |
70 |
V |
Collector-Base Voltage |
VCBO |
70 |
V |
Emitter-Collector Voltage |
VECO |
7 |
V |
Detector Power Dissipation @ TA= 25 Derate above 25 |
PD |
150 |
mW |
1.76 |
mW/ |
The H11AV1-M general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.