H11AG1

Current Transfer Ratio :
Maximum Collector Current :
Maximum Collector Emitter Saturation Voltage : 0.4 V
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Packaging : Bulk
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Power Dissipation : 260 mW


Features:

• High efficiency low degradation liquid epitaxial IRED
• Logic level compatible, input and output currents, with CMOS and LS/TTL
• High DC current transfer ratio at low input currents
• Underwriters Laboratory (UL) recognized File #E90700

Application

• CMOS driven solid state reliability
• Telephone ring detector
• Digital logic isolation

Specifications

Parameters	Symbol	Device	Value	Units
TOTAL DEVICE Storage Temperature	TSTG	All	-55 to +150
Operating Temperature	TOPR	All	-55 to +100
Lead Solder Temperature	TSOL	All	260 for 10 sec
Total Device Power Dissipation @ 25 (LED plus detector) Derate Linearly From 25	PD	All	260	mW
			3.5	mW/
EMITTER Continuous Forward Current	IF	All	50	mA
Reverse Voltage	VR	All	6	V
Forward Current - Peak (1 s pulse, 300 pps)	IF(pk)	All	3.0	A
LED Power Dissipation 25 Ambient Derate Linearly From 25	PD	All	75	mW
			1.0	mW/
DETECTOR Detector Power Dissipation @ 25 Derate Linearly from 25	PD	All	150	mW
			2.0	mW/
Continuous Collector Current		All	50	mA

Description

The H11AG series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current.

This makes H11AG series  ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.