H11AA814

Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Input Type : AC
Maximum Collector Current : 50 mA
Packaging : Bulk
Maximum Power Dissipation : 200 mW
Package / Case : PDIP-4
Maximum Collector Emitter Saturation Voltage : 0.2 V
Maximum Collector Emitter Voltage : 70 V
Current Transfer Ratio : 300 %


Features:

Compact 4-pin package
Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A617A: 40%-80% H11A817B: 130-260%
H11A617B: 63%-125% H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
Minimum BVCEO of 70V guaranteed


Application

AC line monitor
Unknown polarity DC sensor
Telephone line interface


Pinout




Description

The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.