H11A617

Features:

Compact 4-pin package
Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A617A: 40%-80% H11A817B: 130-260%
H11A617B: 63%-125% H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
Minimum BVCEO of 70V guaranteed


Application

Power supply regulators
Digital logic inputs
Microprocessor inputs


Pinout

Description

The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,  connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.