H11A2

Current Transfer Ratio :
Maximum Collector Emitter Saturation Voltage : 0.4 V
Maximum Power Dissipation : 150 mW
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Packaging : Tube
Maximum Operating Temperature : + 100 C
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Collector Current : 100 mA


Features:

* Also available in white package by specifying -M suffix, eg. 4N25-M
* UL recognized (File # E90700)
* VDE recognized (File # 94766)
-Add option V for white package (e.g., 4N25V-M)
-Add option 300 for black package (e.g., 4N25.300)




Application

* Power supply regulators
* Digital logic inputs
* Microprocessor inputs




Specifications

Parameter	Symbol	Value	Units
TOTAL DEVICE Storage Temperature	TSTG	-55 to +150
Operating Temperature	TOPR	-55 to +100
Wave solder temperature (see page 14 for reflow solder profiles)	TSOL	260 for 10 sec
Total Device Power Dissipation @ TA = 25°C Derate above 25°C	PD	250	mW
		3.3 (non-M), 2.94 (-M)
EMITTER DC/Average Forward Input Current	IF	100 (non-M), 60 (-M)	mA
Reverse Input Voltage	VR	6	V
Forward Current - Peak (300s, 2% Duty Cycle)	IF (pk)	3	A
LED Power Dissipation @ TA = 25°C Derate above 25°C	PD	150 (non-M), 120 (-M)	mW mW/
		2.0 (non-M), 1.41 (-M)
DETECTOR Collector-Emitter Voltage	VCEO	30	V
Collector-Base Voltage	VCBO	70	V
Emitter-Collector Voltage	VECO	7	V
Detector Power Dissipation @ TA = 25 Derate above 25	PD	150	mW mW/
		2.0 (non-M), 1.76 (-M)

Description

Optocoupler, Phototransistor Output, with Base Connection

The general purpose optocouplers H11A2 consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.