Features: • RDS(on)<30m@VGS=2.5V, ID=5.5A• RDS(on)<20m@VGS=4.5V, ID=6.5A• High Density Cell Design for Ultra Low On-Resistance• High Power and Current Handing Capability• Fully Characterized Avalanche Voltage and Current• Ideal for Li ion Battery Pack Appl...
H08N02CTS: Features: • RDS(on)<30m@VGS=2.5V, ID=5.5A• RDS(on)<20m@VGS=4.5V, ID=6.5A• High Density Cell Design for Ultra Low On-Resistance• High Power and Current Handing Capabilit...
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Symbol | Parameter | Value | Unit |
VDS | Drain-Source Voltage | 20 | V |
VGS | Gate-Source Voltage | ±12 | V |
ID | Drain Current (Continuous | 8 | A |
IDM | Drain Current (Pulsed) *1 | 30 | A |
PD | Total Power Dissipation @TA=25oC | 1.5 | W |
Total Power Dissipation @TA=75oC | 0.96 | W | |
Tj, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C |
RJA | Thermal Resistance Junction to Ambient (PCB mounted)*2 | 83 | °C/W |