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H07N60

Features: • Robust High Voltage Termination• Avalanc he Energy Specified• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and V DS(on) Specified at Elevated TemperatureSpecificat...

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SeekIC No. : 004357384 Detail

H07N60: Features: • Robust High Voltage Termination• Avalanc he Energy Specified• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Character...

H07N60 Data Sheet

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Part Number:
H07N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and V DS(on) Specified at Elevated Temperature


Specifications

Symbol
Parameter
Value
Units
ID
 Drain to Current (Continuous)
7
A
IDM
 Drain to Current (Pulsed)
28
A
VGS
 Gate-to-Source Voltage (Continue)
±30
V
PD
 Total Power Dissipation (TC=25oC)
H07N60E (TO-220AB)
H07N60F (TO-220FP)
110
40
W
W
Derate above 25OC
H07N60E (TO-220AB)
H07N60F (TO-220FP)
0.58
0.33
W/
W/
Tj
 Operating Temperature Range
-55 to 150
Tstg
 Storage Temperature Range
-55 to 150
EAS
 Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25OC
(VDD=100V, VGS=10V, IL=6A, L=10mH, RG=25)
250
mJ
TL
 Maximum Lead Temperature for Soldering Purposes, 1/8"
from case for 10 seconds
260
Note: 1. VDD=50V, ID=10A
           2. Pulse Width and frequency is limited by Tj(max) and thermal response


Description

This high voltage MOSFET H07N60 uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, H07N60 is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, theH07N60 is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.




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