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H02N60S

Features: • Robust High Voltage Termination• Avalanc he Energy Specified• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecificati...

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SeekIC No. : 004357378 Detail

H02N60S: Features: • Robust High Voltage Termination• Avalanc he Energy Specified• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Character...

H02N60S Data Sheet

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Part Number:
H02N60S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature


Specifications

Symbol Parameter Value Units
ID Drain to Current (Continuous) 2 A
IDM Drain to Current (Pulsed) 8 A
VGS Gate-to-Source Voltage (Continue) ±30 V
PD Total Power Dissipation (TC=25)
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)		 50
50
25		 W
Derate above 25
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)		 0.4
0.4
0.33		 W/
Tj, Tstg Operating and Storage Temperature Range -55 to 150
EAS Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω)		 35 mJ
TL Maximum Lead Temperature for Soldering Purposes, 1/8"
from case for 10 seconds		 260



Description

This high voltage MOSFET H02N60S uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, H02N60S is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, H02N60S is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.




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